BLX14 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLX14
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX14 is Designed for HF
and VHF band applications.
FEATURES:
• P_G = 13 dB min. at 15 W/1.6 MHz
• d₃ = -40 dB typ. at 15 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
4.0 A
V_CBO
85 V
V_EBO
4.0 V
V_CEO
36 V
P_DISS
88 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
1.99 °C/W
PACKAGE STYLE .500 4L STUD (A)
A
.112 x 45°
C
Ø .630 NOM
BC ^E
B
E
1/4-28 UNF-2A
E
D
G
F
H
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.545 / 13.84
D
.495 / 12.57
E
.003 / 0.08
F
G
.185 / 4.70
H
.497 / 12.62
MAXIMUM
inches / mm
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 25 mA
BV_CER
I_C = 25 mA
R_BE = 5.0 Ω
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 6.0 V
I_C = 1.4 A
MINIMUM TYPICAL MAXIMUM
85
85
36
4.0
15
100
UNITS
V
V
V
V
---
f_T
V_CE = 20 V
C_C
V_CB = 30 V
I_C = 3.0 A
f = 1.0 MHz
250
MHz
115
125
pF
G_P
13
dB
d₃
V_CE = 28 V
I_CQ =2.0 A
P_OUT = 15 W(PEP)
-40
dB
f = 1.6 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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