BLW97 Datasheet, PDF (1/1 Pages) NXP Semiconductors – HF power transistor

BLW97
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW97 is Designed for High
voltage applications up tp 30 MHz
PACKAGE STYLE .500 4L FLG
FEATURES:
• P_G = 11.5 dB min. at 175 W/30 MHz
• IMD₃ = -30 dBc max. at 175 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
15 A
V_CESM
65 V
V_CEO
33 V
V_EBO
4.0 V
P_DISS
230 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.76 °C/W
FULL R
A
E
.112x45°
L
C
C
B_B
E
E
H
D
GF
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 50 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 20 mA
I_CES
V_CE = 33 V
h_FE
V_CE = 5.0 V
I_C = 10 A
V_CE(SAT)
I_C = 25 A
I_B = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
33
4.0
20
15
50
2.4
UNITS
V
V
V
mA
---
V
C_C
V_CB = 28 V
f = 1.0 MHz
380
pF
G_P
IMD₃
η_C
V_CE = 28 V
IMPEDANCE DATA
FREQ.
470 MHz
I_CQ = 100 mA
Z_IN(Ω)
1.5 – j2.7
P_OUT = 175 W (PEP)
Z_CL(Ω)
5.7 + j1.5
11.5
40
P_IN(W)
2.0
dB
-30
dBc
%
V_CE(V)
12.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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