BLW83 Datasheet, PDF (1/1 Pages) NXP Semiconductors – HF/VHF power transistor

BLW83
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW83 is Designed for use
in transmitting amplifiers operatimg in
theh.f. and v.h.f. bands and for
applications as linear amplifier in
class-A and AB.
FEATURES:
• P_G = 20 dB min. at 10 W/30 MHz
• IMD₃ = -30 dBc max. at 10 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.0 A
V_CES
65 V
V_CEO
36 V
V_EBO
4.0 V
P_DISS
80 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.2 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 10 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 36 V
h_FE
V_CE = 5.0 V
I_C = 1.25 A
MINIMUM TYPICAL MAXIMUM
65
36
4.0
5
10
100
UNITS
V
V
V
mA
---
C_ob
V_CB = 12.5 V
f = 1.0 MHz
100
pF
G_PE
V_CC = 26 V
I_CQ = 25 mA
f = 30 MHz
20
21
---
dB
IMD₃
P_OUT = 10 W(PEP)
-30
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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