BLW80 Datasheet, PDF (1/1 Pages) NXP Semiconductors – UHF power transistor

BLW80
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW80 is Designed for
Class A,B or C UHF & VHF
Communication applications up to 470
MHz.
FEATURES:
• P_G = 8.0 dB Typical at 470 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
1.0 A
V_CES
36 V
P_DISS
17 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
10.3 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
BV_CEO
BV_CES
BV_EBO
I_CES
h_FE
V_CE
I_C = 50 mA
I_C = 10 mA
I_E = 4.0 mA
V_CE = 17 V
V_CE = 5 V
I_C = 1.5 A
TEST CONDITIONS
V_BE = 0 V
I_C = 5.0 A
I_B = 300 mA
MINIMUM TYPICAL MAXIMUM
17
36
4
4.0
10
35
0.75
UNITS
V
V
V
mA
---
V
C_C
V_CB = 12.5 V
F = 1. 0 MHz
14
pF
P_G
V_CE = 12.5 V
P_OUT = 4.0 W
F = 470 MHz
8.0
15
DB
%
η
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV 0
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