BLW77 Datasheet, PDF (1/1 Pages) NXP Semiconductors – HF/VHF power transistor

BLW77
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW77 is Designed for use in
class-AB or class-B operated high power
transmitters in the H.F. and V.H.F bands
and, as a Linear amplifier in the H.F.
band.
PACKAGE STYLE .500 4L FLG
FEATURES:
• P_G = 12 dB min. at 15-30 W/1.6-28 MHz
• Common Emitter
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
12 A
V_CB
70 V
V_CE
35 V
P_DISS
245 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.71 °C/W
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 20 mA
I_CES
V_E = 35 V
h_FE
V_CE = 5.0 V
I_C = 7.0 A
MINIMUM TYPICAL MAXIMUM
35
70
3.0
20
15
80
UNITS
V
V
V
mA
---
C_c
V_CB = 28 V
f = 1.0 MHz
225
pF
G_P
12
d₃
η
V_CE = 28 V
I_C(ZS) = 0.1 A
P_L = 15-130 W (PEP)
f = 1.6-28 MHz
37.5
dB
-30
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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