BLW75 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLW75
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW75 is Designed for
25V Large-Signal Amplifier
Applications, TV Transposers, and
Transmitters Operating in Band lll.
MAXIMUM RATINGS
I_C
4.0 A
V_CE
32 V
V_CB
P_DISS
T_J
T_STG
θ_JC
60 V
60 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +125 ^OC
1.9 ^OC/W
PACKAGE STYLE .380" 4L STUD (MOD STUD)
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_CBO
I_C = 50 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 25 V
I_C = 2.0 A
MINIMUM TYPICAL MAXIMUM
60
60
30
4.0
20
45
UNITS
V
V
V
V
---
C_ob
V_CB = 30 V
C_re
V_CE = 30 V
I_C = 200 mA
f_T
V_CE = 25 V
I_C = 6.0 A
f = 1.0 MHz
f = 1.0 MHz
f = 100 MHz
90
120
pF
55
pF
800
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1