BLW50F Datasheet, PDF (1/1 Pages) NXP Semiconductors – HF/VHF power transistor

BLW50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW50F is Designed for
use in transmitters in the HF and VHF
band applications up tp 30 MHz.
FEATURES:
• P_G = 14 dB min. at 75 W/30 MHz
• IMD₃ = 50 dBc max. at 75 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.25 A
V_CBO
110 V
V_CEO
55 V
V_EBO
4.0 V
P_DISS
87 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.0 °C/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10834
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 100 mA
BV_CE0
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 55 V
h_FE
V_CE = 6.0 V
I_C = 1.4 A
MINIMUM TYPICAL MAXIMUM
110
55
4.0
10
19
---
50
UNITS
V
V
V
mA
---
C_ob
V_CB = 50 V
f = 1.0 MHz
100
pF
G_P
IMD₃
η_C
V_CE = 50 V
P_OUT = 75 W(PEP)
14
dB
---
---
-30
dBc
37
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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