BLW34 Datasheet, PDF (1/1 Pages) NXP Semiconductors – UHF linear power transistor

BLW34
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW34 is Designed for use
in UHF amplifiers up to 860 MHz.
FEATURES:
• P_G = 10.2 dB Typical at 860 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
3.5 A
V_CB
50 V
P_DISS
31 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
5.6 °C/W
PACKAGE STYLE .280 4L STUD
D IM
A
B
C
D
E
F
G
H
I
J
K
A
45°
C
B
E
E
B
D
C
E
F
G
H
K
M IN IM U M
in c h e s / m m
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.245 / 6.22
.175 / 4.45
.275 / 6.99
.572 / 14.53
.130 / 3.30
.640 / 16.26
J
I
#8-32 UN C
M A X IM U M
in c h e s / m m
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 60 mA
BV_CES
I_C = 8.0 mA
V_BE = 0 V
BV_EBO
I_E = 4.0 mA
I_CES
V_CE = 30 V
h_FE
V_CE = 25 V
I_C = 600 mA
C_c
C_re
V_CB = 25 V
C_cs
f = 1.0 MHz
GP
V_CE = 25 V
P_OUT 2.15 W
I_C = 600 mA
f = 224 MHz
MINIMUM TYPICAL MAXIMUM
30
50
4
2
20
40
UNITS
V
V
V
mA
---
13.5
pF
8.4
1.2
10.2
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV 0
1/1