BLW31_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLW31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW31 is an NPN silicon power
transistor, designed 175 MHz applications,
especially suited for design of wide-band
and semi-wide-band VHF amplifiers.
FEATURES:
• Common Emitter-Class-A, B or C
• P_G = 9 dB at 28 W/175 MHz
• Omnigold™ Metalization System
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
E
ØC
B
MAXIMUM RATINGS
I_C
6.0 A
V_CESM
36 V
V_CEO
18 V
V_EBO
4.0 V
P_DISS
96 W @ T_MB = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.85 °C/W
D
#8-32 UNC-2A
E
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 25 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 18 V
h_FE
V_CE = 5.0 V
I_C = 3.5 A
MINIMUM TYPICAL MAXIMUM
18
36
4.0
10
10
80
UNITS
V
V
V
mA
---
C_CC
C_RE
C_CS
V_CB = 13.5 V
92
f = 1.0 MHz
58
pF
2
P_G
η_C
V_CC = 13.5 V
P_OUT = 28 W
f = 175 MHz
9.0
60
9.5
70
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/1