BLV859 Datasheet, PDF (1/1 Pages) NXP Semiconductors – UHF linear push-pull power transistor

BLV859
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV859 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P_G = 10 dB at 150 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
15 A
V_CEO
28 V
V_CBO
60 V
V_EBO
2.5 V
P_DISS
145 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.20 °C/W
PACKAGE STYLE .400 BAL FLG(C)
.080x45°
A
B
FULL R
(4X).060 R
E
D
C
.1925
I
F
G
H
N
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.210 / 5.33
C
.120 / 3.05
D
.380 / 9.65
E
.780 / 19.81
F
.435 / 11.05
G
1.090 / 27.69
H
1.335 / 33.91
I
.003 / 0.08
J
.060 / 1.52
K
.082 / 2.08
L
M
.395 / 10.03
N
.850 / 21.59
M
L
JK
MAXIMUM
inches / mm
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 30 mA
BV_CEO
I_C = 60 mA
BV_EBO
I_E = 1.2 mA
I_CBO
V_CB = 27 V
I_CEO
V_CE = 20 V
h_FE
V_CE = 25 V
I_C = 2.25 A
MINIMUM TYPICAL MAXIMUM
60
28
2.5
3.0
6.0
30
140
UNITS
V
V
V
mA
mA
---
C_OB
V_CB = 26 V
f = 1.0 MHz
75
pF
P_G
IMD₁
VSRW
V_CC = 25 V
P_OUT = 20 W
I_CQ = 2 X 2.25 A
V_CC = 25 V
I_CQ = 2 X 2.25 A
VSWR = 50:1 @ all phase angles
f = 860 MHz
P_OUT = 20 W PEP
10
dB
-54
dBc
No Degradation in Output
Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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