BLV80-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLV80-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The BLV80-28 is Designed for 28 Volt
Class C VHF Power
AmplifierApplications up to 175 MHz.
FEATURES:
• η_C = 65 % min. at 80 W/175 MHz
• P_G = 6.5 dB min. at 80 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
9.0 A
V_CBO
65 V
V_CEO
P_DISS
T_J
T_STG
θ_JC
35 V
117 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.5 ^OC/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10797
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 25 V
I_C = 3.5 A
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.5
15
100
UNITS
V
V
V
mA
---
C_OB
V_CB = 30 V
f = 1.0 MHz
150
pF
P_G
6.5
7.0
dB
η_C
V_CC = 25 V
P_OUT = 80 W
f = 175 MHz
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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