BLV59 Datasheet, PDF (1/1 Pages) NXP Semiconductors – UHF linear power transistor

ASI BLV59
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV59 is a Common
Emitter Device Designed for
Class A and AB Amplifier
Applications in TV Band IV-V
Transmitters.
FEATURES INCLUDE:
• Gold Metalization
• Intrnal Matching
• Emitter Ballasting
MAXIMUM RATINGS
I_C
10 A
V_CB
P_DISS
T_J
T_STG
θ_JC
50 V
80 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +150 ^OC
2.2 ^OC/W
PACKAGE STYLE .230 6FLG.
1, 3, 4 & 6 = EMITTER
2 = BASE 5 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 20 mA
h_FE
V_CE = 5.0 V
I_C = 1.0A
MINIMUM TYPICAL MAXIMUM
25
50
4.0
5.0
20
100
UNITS
V
V
V
---
C_OB
V_CB = 28 V
f = 1.0 MHz
50
pF
P_G
V_CE = 25 V
I_CQ = 60 mA
P_OUT = 30.0 W
8.0
9.0
IMD₃
Vision = -8.0 dB Sound = -10 dB Chroma = -16 dB
-48
dB
dBc
P_G
V_CE = 25 V
I_CQ = 1.6 A
P_OUT = 15 W
9
10
IMD₃
Vision = -8.0 dB Sound = -10 dB Chroma = -16 dB
-60
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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