BLV57 Datasheet, PDF (1/1 Pages) NXP Semiconductors – UHF linear push-pull power transistor

BLV57
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV57 is Designed for use
as push-pull amplifier, primarily in
linear UHF TV transmitting
Applications.
FEATURES:
• Input Matching Network
• Common emitter
• Omnigold™ Metalization System
with eutectic die bonding
MAXIMUM RATINGS
I_C
2.0 A
V_CESM
50 V
V_CE
27 V
P_DISS
77 W @ T_C = 25 C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.27 °C/W
PACKAGE STYLE .400 8L FLG
G
F
E
.1925
.125
K
C
D
B
A
FULL R
O
H
4 x .060 R
I
J
N
LM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
M IN IM UM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10.03
.030 / 0.76
.360 / 9.14
.130 / 3.30
M A X IM U M
inches / mm
.125 / 3.18
.075 / 1.91
.390 / 9.91
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
ORDER CODE: ASI10646
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 25 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_E = 27 V
h_FE
V_CE = 25 V
I_C = 850 mA
f_T
V_CB = 25 V
V_CB = 25 V
I_E = 1.7 A
I_E = 850 mA
P_G
IMD₁
V_CE = 25 V
P_OUT = 6.0 W
I_C = 850 mA
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
27
50
3.5
10
15
2.5
2.5
UNITS
V
V
V
mA
---
GHz
8.0
dB
-60
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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