BLV32F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLV32F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV32F is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters.
FEATURES:
• Diffused emitter ballasting resistors
• P_G = 16 dB at 10 W/224 MHz
• Omnigold™ Metalization System
PACKAGE STYLE .500 6L FLG
MAXIMUM RATINGS
I_C
4.0 A
V_CBO
60 V
V_CEO
32 V
V_CES
60 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
82 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.1 ^OC/W
1= Collector 2= Base 3 and 4= Emitter
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 15 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 32 V
h_FE
V_CE = 25 V
I_C = 1.6 A
MINIMUM TYPICAL MAXIMUM
32
60
4.0
5.0
20
120
UNITS
V
V
V
mA
---
C_C
V_CB = 25 V
f = 1.0 MHz
50
pF
P_G
V_CE = 25 V
P_OUT = 10 W
f = 224 MHz
16
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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