BLV31 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BLV31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV31 is Designed for use
in VHF amplifiers
FEATURES:
• P_G = 16.5 dB Typical at 224 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
3A
V_CB
60 V
P_DISS
48 W @ T_C = 25 ^OC
T_J
-65 ^OC to +200 ^OC
T_STG
-65 ^OC to +150 ^OC
θ_JC
3.5 ^OC/W
D IM
A
B
C
D
E
F
G
H
I
J
K
PACKAGE STYLE .280 4L STUD
A
45°
C
B
E
E
B
D
C
E
F
G
H
K
M IN IM U M
inches / m m
1.010 / 2 5.65
.2 20 / 5.59
.2 70 / 6.86
.0 03 / 0.08
.1 17 / 2.97
.2 45 / 6.22
.1 75 / 4.45
.2 75 / 6.99
.5 72 / 14.53
.1 30 / 3.30
.6 40 / 16.26
J
I
#8-32 U N C
M A X IM U M
inches / m m
1.055 / 2 6.80
.2 30 /5.84
.2 85 / 7.24
.0 07 / 0.18
.1 37 / 3.48
.2 55 / 6.48
.2 17 / 5.51
.2 85 / 7.24
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 25mA
V_BE = 0 V
BV_EBO
I_E = 10 mA
h_FE
V_CE = 25 V
I_C = 800 mA
C_OB
V_CB = 25 V
f = 1.0 MHz
POUT
PG
* @ 25 ^OC
V_CE = 25 V
F = 224 MHz
I_C= 800 mA
T= 70 ^OC
P_IN = 2.5 W
MINIMUM TYPICAL MAXIMUM
30
60
4
15
75
120
UNITS
V
V
V
---
35
pF
5.0
7.0*
W
15
16.5*
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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