BLF861A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – UHF POWER LDMOS TRANSISTOR

BLF861A
UHF POWER LDMOS TRANSISTOR
DESCRIPTION:
The ASI BLF861A ia a Silicon N-
channel enhancement mode lateral D-
MOS push-pull transistor.
FEATURES:
• Internal input-output matching
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
18 A
V_DS
65 V
V_GS
±15 V
P_DISS
318 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.55 °C/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 1.5 mA
I_DSS
V_DS = 32 V
V_GS = 0 V
I_DSX
V_DS = 10 V
V_GS = V_GSth + 9 V
I_GSS
V_DS = 0 V
V_GS = ±15 V
V_GS(th)
I_D = 150 mA
V_DS = 10 V
R_DS(on)
I_D = 4.0 A
V_GS = V_GSth + 9 V
g_fs
I_D = 4.0 A
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 32 V
V_GS = 0 V
f = 1.0 MHz
G_p
V_DS = 32 V
P_out = 150 W f = 860 MHz
η_D
MINIMUM
65
18
4.0
13.5
50
TYPICAL MAXIMUM
2.2
25
5.5
160
4.0
82
40
6.0
14.5
UNITS
V
µA
A
nA
V
mΩ
S
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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