BLF522 Datasheet, PDF (1/2 Pages) NXP Semiconductors – UHF power MOS transistor

BLF522
UHF POWER MOS TRANSISTOR
DESCRIPTION:
The ASI BLF522 is Designed for
communications transmitter
applications in the UHF frequency
range.
FEATURES:
• Designed for broadband operation.
• High power gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
V_DS
50 V
±V_GS
30 V
V_DG
50 V
I_D
1.6 A
P_DISS
30 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
6.0 °C/W
PACKAGE STYLE .230 6L FLG
.040x45° ^C
4X .025 R ₂
.115
.430 D
A
B
46
E
.125
I
13 5
F
G
H
2 X Ø .1 3 0
L
JK
DIM
M IN IM U M
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
1 & 2 Source 3 Gate 4 Drain 5 & 6 Source
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
I_DS = 20 mA
I_DSS
V_DS = 12.5 V
I_GSS
V_DS = 0 V
±V_GS = 30 V
V_GS
V_GS = 40 V
I_DS = 40 mA
gM
V_DS = 10 V
V_GS = 5.0 V
R_DS(on)
V_GS = 20 V
I_DS = 3.2 A
I_Dsat
V_DS = 10 V
V_GS = 20 V
MINIMUM TYPICAL MAXIMUM
40
0.4
1.0
1.0
7.0
0.4
1.2
4.6
UNITS
V
mA
µA
V
Mho
Ω
A
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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