BLF378 Datasheet, PDF (1/1 Pages) NXP Semiconductors – VHF push-pull power MOS transistor

BLF378
POWER MOSFET
DESCRIPTION: ^{N-Channel Enhancement Mode}
The ASI BLF378 is a N-Channel
Enhancement-Mode RF Power
MOSFET Designed for broadband RF
Applications up to 225 MHz.
FEATURES INCLUDE:
• P_G = 14 dB Min. at 225 MHz
• 20:1 Load VSWR Capability
• Omnigold™ metalization system
PACKAGE STYLE .400 BAL FLG(D)
MAXIMUM RATINGS
I_D
18 A
V_DSS
125 V
V_GS
20 V
P_DISS
500 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.35 °C/W
1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 40 mA
V_GS = 0 V
I_DSS
V_DS = 50 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 30 V
V_GS
V_GS = V_DS
I_DS = 300 mA
gM
V_DS = 10 V
V_GS = 5.0 V
R_DSON
V_GS = 20 V
I_DS = 6.0 A
I_DSAT
V_GS = 20 V
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 50 V
V_GS = 0 V
f = 1.0 MHz
P_GS
η
V_DS = 50 V I_DQ = 0.8 A
ψ
f = 225 MHz
MINIMUM
125
1.0
14
50
NONE
TYPICAL MAXIMUM
5.0
1.0
7.0
5.5
0.30
35
400
200
15
20:1
UNITS
V
mA
µA
V
Mho
Ω
A
pF
dB
%
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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