BLF368 Datasheet, PDF (1/1 Pages) NXP Semiconductors – VHF push-pull power MOS transistor

BLF368
RF POWER VDMOS TRANSISTOR
DESCRIPTION:
The ASI BLF368 is a Dual Common
Source N-Channel Enhancement-
Mode VDMOS. designed for RF
Applications.
MAXIMUM RATINGS
I_D
27 A
V_DSS
70 V
V_GS
±20 V
P_DISS
465 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.35 °C/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_DS = 120 mA V_GS = 0 V
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 30 V
V_GS
I_DS = 600 mA V_GS = V_DS
gM
V_DS = 10 V
V_GS = 5.0 V
R_DSON
V_GS = 20 V
I_DS = 15 A
I_DSAT
V_GS = 20 V
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
G_ps
V_DS = 28 V
I_DQ = 1.2 A P_out = 300 W
η
f = 175 MHz
ψ
MINIMUM
65
1.0
5.0
13
TYPICAL
7.2
42
300
192
18
55
MAXIMUM
6.0
1.0
7.0
20:1
UNITS
V
mA
µA
V
mho
Ω
A
pF
dB
%
Relative
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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