BLF248 Datasheet, PDF (1/1 Pages) NXP Semiconductors – VHF push-pull power MOS transistor

BLF248
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI BLF248 is a Balanced
N-Channel Enhancement-Mode
RF Power MOSFET Designed for AM
and FM Power Amplifier Applications
up to 250 MHz.
FEATURES INCLUDE:
• P_G = 11 dB Typical at 225 MHz
• 5:1 Load VSWR Capability
• Omnigold™ metalization system
PACKAGE STYLE .400 BAL FLG(D)
MAXIMUM RATINGS
I_D
40 A
V_DSS
65 V
V_GS
P_DISS
T_J
T_STG
θ_JC
±40 V
500 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +200 ^OC
0.35 ^OC/W
1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE
ORDER CODE: ASI10495
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
V_DS = 10 V
I_D = 100 mA
g_fs
V_DS = 10 V
I_D = 5.0 A
C_iss
C_oss
C_rss
V_DS = 50 V
V_GS = 0 V
f = 1.0 MHz
P_G
V_DD = 28 V
I_DQ = 2 x 250 mA
P_out = 300 W
η_D
f = 225 MHz
ψ
V_SWR = 5:1 AT ALL PHASE ANGLES
NONE
MINIMUM
65
1.0
3,500
TYPICAL MAXIMUM
5.0
1.0
5.0
380
190
25
UNITS
V
mA
µA
V
mS
pF
10
11
dB
50
55
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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