BLF245C Datasheet, PDF (1/1 Pages) Advanced Semiconductor – RF POWER MOSFET

BLF245C
RF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI BLF245C is a VDMOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
FEATURES INCLUDE:
• P_G = 16 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ metalization system
MAXIMUM RATINGS
I_D
6.0 A
V_DS
65 V
V_GS
±20 V
P_DISS
68 W @ T_C = 25 °C
T_J
-65 °C to +150 °C
T_STG
-65 °C to +200 °C
θ_JC
1.8 °C/W
PACKAGE STYLE .400 8L FLG
G
F
E
.1925
.125
K
C
D
B
A
FULL R
O
H
4 x .060 R
I
J
N
LM
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
M IN IM U M
inches / m m
.115 / 2.92
.065 / 1.65
.380 / 9.65
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10.03
.030 / 0.76
.360 / 9.14
.130 / 3.30
M A X IM U M
inches / m m
.125 / 3.18
.075 / 1.91
.390 / 9.91
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
COMMON SOURCE
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 10 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = ±20 V
V_GS(th)
V_DS = 10 V
I_D = 10 mA
g_fs
V_DS = 10 V
I_D = 1.5 A
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
P_G
V_DS = 28 V
I_DQ = 25 mA
η_D
P_out = 30 W
f = 150 MHz
ψ
V_SWR = 30:1 AT ALL PHASE ANGLES
NONE
MINIMUM
65
2.0
1.2
TYPICAL MAXIMUM
2.0
1.0
4.5
1.9
125
75
7.0
UNITS
V
mA
µA
V
S
pF
13
16
dB
50
60
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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