BLF245 Datasheet, PDF (1/1 Pages) NXP Semiconductors – VHF power MOS transistor

BLF245
RF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI BLF245 is a vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
FEATURES INCLUDE:
• P_G = 13 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ metalization system
PACKAGE STYLE .380 4L FLG
MAXIMUM RATINGS
I_D
6.0 A
V_DS
65 V
V_GS
±20 V
P_DISS
68 W @ T_C = 25 °C
T_J
-65 °C to +150 °C
T_STG
-65 °C to +200 °C
θ_JC
1.8 °C/W
1 = DRAIN 2 = GATE 3&4 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 10 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = ±20 V
V_GS(th)
V_DS = 10 V
I_D = 10 mA
g_fs
V_DS = 10 V
I_D = 1.5 A
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
P_G
V_DS = 28 V
I_DQ = 25 mA
η_D
P_out = 30 W
f = 150 MHz
ψ
V_SWR = 30:1 AT ALL PHASE ANGLES
NONE
MINIMUM
65
2.0
1.2
TYPICAL MAXIMUM
2.0
1.0
4.5
1.9
125
75
7.0
UNITS
V
mA
µA
V
S
pF
13
16
dB
50
60
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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