BLF145 Datasheet, PDF (1/1 Pages) NXP Semiconductors – HF power MOS transistor

BLF145
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI BLF145 is Designed for
General Purpose Class AB Power
Amplifier Applications up to 175 MHz.
FEATURES:
• P_G = 20 dB Typ. at 30 W /28 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
3.0 A
V_(BR)DSS
65 V
V_GSS
20 V
P_DISS
68 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
2.6 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
S
A
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25°C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
V_GS = 0 V
I_DS = 10 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS
V_DS = 10 V
I_D = 10 mA
V_GS1-V_GS2 V_DS = 10 V
I_D = 10 mA
G_FS
V_DS = 10 V
I_D = 1.5 A
C_iss
C_oss
C_rss
V_GS = 28 V
V_DS = 0 V
f = 1.0 MHz
P_G
V_DD = 28
η_D
P_OUT = 30 W f = 28 MHz
MINIMUM TYPICAL MAXIMUM
65
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2.0
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1.0
2.0
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4.5
100
1.2
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UNITS
V
mA
µA
V
mV
S
125
75
pF
11
20
dB
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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