BFW13 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – N-CHANNEL SILICON FET DEPLETION MODE

BFW13
N-CHANNEL SILICON FET
DEPLETION MODE
DESCRIPTION:
The ASI BFW13 is Designed for Low
Noise Video Amplifier Applications.
MAXIMUM RATINGS
I_D
10 mA
I_G
5.0 mA
V_DS
30 V
V_DG
30 V
V_GS
P_tot
T_J
T_STG
θ_JA
30 V
150 mW @ T_A = 110 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
590 ^OC/W
PACKAGE STYLE TO- 72
1 = SOURCE
3 = GATE
2 = DRAIN
4 = SHIELD
Order code: ASI10832
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
I_GS
V_GS = 10 V
T_C = 150 ^OC
100
100
I_DSS
V_DS = 15 V
V_GS = 0 V
0.2
1.5
V_GS
V_DS = 15 V
I_D = 50 µA
0.1
1.0
V_(P)GS
V_DS = 15 V
I_D = 500 pA
1.2
Iy_fsI
Iy_osI
V_DS = 15 V
V_GS = 0 V
1500
10
Iy_fsI
Iy_osI
V_DS = 15 V
I_D = 200 µA
f = 1.0 MHz
500
5.0
C_iss
C_rs
V_DS = 15 V
f = 1.0 MHz
5.0
0.8
V_n
V_DS = 15 V
I_D = 200 µA BW = 0.6 to 100 Hz
500
UNITS
pA
nA
mA
V
V
µS
µS
pF
nV
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1