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BFT51FA Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR
BFT51F.A
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI BFT51F.A is Designed for
High Frequency Amplifier Applications.
PACKAGE STYLE TO- 126
MAXIMUM RATINGS
IC
500 mA
VCE
PDISS
TJ
TSTG
θJC
20 V
3.0 W @ TC = 25 OC
-65 OC to +175 OC
-65 OC to +175 OC
50 OC/W
NONE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 1.0 mA
RBE = 100 Ω
BVCBO
IC = 1.0 mA
ICEO
VCE = 5.0 V
ICES
VCE = 10 V
IEBO
VEB = 3.0 V
hFE
VCE = 5.0 V
IC = 100 mA
IC = 300 mA
ft
VCE = 5.0 V
IC = 300 mA f = 100 MHz
Cob
VCB = 5.0 V
f = 1.0 MHz
MINIMUM
10
18
20
40
1.0
TYPICAL MAXIMUM
1.0
100
1.0
2.0
4.0
UNITS
V
V
V
mA
µA
mA
---
GHz
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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