BFT51F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

BFT51F
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI BFT51 is Designed for
High Frequency Amplifier Applications.
PACKAGE STYLE TO- 126
MAXIMUM RATINGS
I_C
500 mA
V_CE
20 V
P_DISS
3.0 W @ T_C = 25 °C
T_J
-65 °C to +175 °C
T_STG
-65 °C to +175 °C
θ_JC
20 K/W
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CER
I_C = 10 mA
R_BE = 100 Ω
BV_CBO
I_C = 5.0 mA
BV_EBO
I_C = 1.0 mA
I_CES
V_CE = 10 V
H_FE
V_CE = 5.0 V
I_C = 100 mA
I_C = 300 mA
f_t
V_CE = 5.0 V
I_C = 300 mA f = 100 MHz
C_cb
V_CB = 5.0 V
f = 1.0 MHz
C_C
V_CB = 5.0 V
f = 1.0 MHz
MINIMUM
10
19
20
3.0
40
50
1.0
TYPICAL MAXIMUM
100
2.0
4.2
5.8
UNITS
V
V
V
V
µA
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GHz
Pf
Pf
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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