BFR65 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BFR65
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BRF65 is Designed for
20 V Large-Signal RF Amplifier
Applications.
MAXIMUM RATINGS
400 mA
I_C
1.0 A (PEAK) f = ≥ 1.0 MHz
V_CE
25 V
V_CB
P_DISS
T_J
T_STG
θ_JC
40 V
5.0 W @ T_mb = 125 ^OC
f = ≥ 1.0 MHz
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
15 ^OC/W
PACKAGE STYLE SOT- 48
ALL DIMENSIONS IN MM
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
BV_CER
I_C = 5.0 mA
I_C = 5.0 mA
R_BE = 10 Ω
BV_CBO
I_C = 1.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 20 V
h_FE
V_CE(SAT)
V_CE = 20 V
I_C = 200 mA
I_C = 200 mA
I_C = 400 mA
I_B = 20 mA
C_ob
V_CB = 20 V
f = 1.0 MHz
f_t
V_CE = 20 V
V_CE = 20 V
G_P
V_CE = 20 V
I_C = 200 mA
I_C = 400 mA
I_C = 200 mA
f = 500 MHz
f = 500 MHz
f = 200 MHz
f = 800 MHz
P_o
V_CE = 20 V
I_C = 200 mA
f = 200 MHz
MINIMUM TYPICAL MAXIMUM
25
40
40
3.5
100
30
20
0.75
10
1.2
1.0
15
19
4.5
450
UNITS
V
V
V
V
µA
---
V
pF
GHz
dB
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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