BAT38 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON SCHOTTKY BARRIER DIODE

BAT38
SILICON SCHOTTKY BARRIER DIODE
DESCRIPTION:
The ASI BAT38 is a silicon Schottky
barrier mixer diode, Designed for use
in Ka frequency band Applications.
FEATURES INCLUDE:
• Low R_{S__}5.0Ω
• Low NF 8.5 Db Typ.
• Frequency Range 26 to 40 GHz
• Available as Matched pairs by adding
the MP to the part number. Matching
criteria is ± 10% on rectified current
and within 150 Ω i.f. impedance.
MAXIMUM RATINGS
V_R
2.0 V
P_DISS
250 mW @ T_C = 25 °C
T_J
-55 °C to +100 °C
T_STG
-55 °C to +100 °C
PACKAGE STYLE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_R
I_R = 10 µA
V_F
I_F = 1.0 mA
I_F
V_F = 0.5 V
I_R
V_R = 0.5 V
C_T
V_R = 0 V
f = 1.0 MHz
NF
I_F = 0.5 mA
f = 30 GHz
MINIMUM TYPICAL
2.0
2.0
.27
6.0
MAXIM
0.29
2.0
UNITS
V
V
mA
µA
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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