BAM80 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BAM80
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM80 is Designed for VHF
AM power amplifier Applications in the
range of 100 to 150 MHz.
FEATURES:
• Common Emitter
• P_G = 6.0 dB at 20 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.5 A
V_CES
60 V
V_CEO
35 V
V_EBO
4.0 V
P_DISS
85 W
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
2.0 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
E
ØC
B
D
#8-32 UNC-2A
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 20 mA
BV_EBO
I_E = 5.0 mA
I_CBO
I_CES
V_CB = 30 V
V_CE = 30 V
T_C = 125 ^OC
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
35
60
4.0
2.0
10
5.0
---
UNITS
V
V
V
mA
mA
---
C_cb
V_CB = 28 V
f = 1.0 MHz
75
pF
P_G
V_CE = 13.5 V
η_C
P_OUT =20 W
f = 150 MHz ^6.0
65
dB
%
VSWR
30:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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