BAM120 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM120 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 150
MHz.
FEATURES:
• η_C = 65 % typ. @ 120 W/150 MHz
• P_G = 9.0 dB typ. @ 120 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
12 A
V_CES
60 V
V_EBO
4.0 V
P_DISS
140 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.2 °C/W
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10430
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 20 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 25 V
I_C = 3.5 A
MINIMUM TYPICAL MAXIMUM
60
32
4.0
15
100
UNITS
V
V
V
---
C_OB
V_CE = 27 V
f = 1.0 MHz
240
pF
P_G
9.0
dB
η_C
V_CC = 27 V
P_OUT = 120 W
f = 150 MHz
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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