AVF600_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVF600
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVF600 is a high power pulsed
transistor, designed for JFF avionics
applications. It is designed for operation
under short pulse width & low cycle and
capable of withstanding 25:1 load
mismatch.
FEATURES:
• Internal Input/Output Matching Networks
• P_G = 5.6 dB at 600W/1090 MHz
• Omnigold™ Metalization System
• CB operation
• 25:1 VSWR capability
MAXIMUM RATINGS
I_C
43 A
V_CC
55 V
P_DISS
1670 W @ T_C = 25 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
0.09 °C/W
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45°
A
.040 x 45°
2xB
C
E
F
D
G
H
I
J
K
L
2xR
NP
M
DIM
M IN IM U M
inches / mm
MAXIMUM
inches / mm
A
.135 / 3.43
.145 / 3.68
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
D
.376 / 9.55
.396 / 10.06
E
.110 / 2.79
.130 / 3.30
F
.395 / 10.03
.407 / 10.34
G
.193 / 4.90
H
.490 / 12.45
.510 / 12.95
I
.100 / 2.54
J
.690 / 17.53
.710 / 18.03
K
.890 / 22.61
.910 / 23.11
L
.003 / 0.08
.006 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
P
.230 / 5.84
ORDER CODE: ASI10576
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 25 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 50 V
h_FE
V_CE = 5.0 V
I_C = 2.0 A
MINIMUM TYPICAL MAXIMUM
65
65
3.5
60
10
250
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 50 V P_OUT = 600 W f = 1030 - 1090 MHz
P_IN = 150 W
6.0
35
dB
%
Pulse width = 10 µsec, Duty Cycle = 1.0 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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