AVF450_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVF450
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVF450 is a high power common
base bipolar transistor. It is designed for
pulse applications for TACAN in 1030-1-90
MHz band.
FEATURES:
• Internal Input/Output Matching Networks
• P_G = 6.2 dB at 450 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
40 A
V_CC
55 V
P_DISS
1166 W @ T_C = 2°C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
0.15 °C/W
PACKAGE STYLE .400 2L FLG(A)
4x .062 x 45°
A
.040 x 45°
2xB
C
E
F
D
G
H
I
J
K
L
2xR
NP
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
M IN IM U M
inches / mm
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.490 / 12.45
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.193 / 4.90
.100 / 2.54
M
M A X IM U M
inches / mm
.145 / 3.68
.120 / 3.05
.396 / 10.06
.130 / 3.30
.407 / 10.34
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10575
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 50 mA
BV_EBO
I_E = 30 mA
h_FE
V_CE = 5.0 V
I_C = 500 mA
P_D
Pulse Drop
MINIMUM TYPICAL MAXIMUM
55
3.5
10
0.25
UNITS
V
V
---
dB
P_G
η_C
V_CC = 50 V P_OUT = 450 W f = 1030 - 1090 MHz
6.5
40
dB
%
Pulse Width = 10 µsec, Duty Cycle = 1 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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