AVF1000 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVF1000
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVF1000 is a common base
transistor Designed for pulsed systems
Applications up to 1090 MHz.
FEATURES:
• Internal Input/Output Matching Networks
• P_G = 6.0 dB at 1000W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
65 A
V_CES
55 V
V_EBO
3.5 V
P_DISS
2900 W @ T_C 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
0.06 °C/W
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 100 mA
BV_EBO
I_E = 50 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
P_OUT
P_IN
P_G
η_C
t_r
VSRW¹
F = 1090 MHz
V_CC = 45 V
PW = 10 µsec
DF = 1 %
F = 1030 MHz
Note 1: At rated output power and pulse conditions.
PACKAGE STYLE .450 BAL FLG (B)
.120 x 45°
C
ED
.208
.210
I
A
B
1
FULL R
2
3
F
.050 NOM.
G
H
M
4X.060 R
J KL
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.373 / 9.47
.385 / 9.78
B
.205 / 5.21
C
.120 / 3.25
.130 / 3.30
D
.411 / 10.44
.421 / 10.69
E
.825 / 20.96
.865 / 21.97
F
.525 / 13.34
.535 / 13.59
G
1.255 / 31.88
1.265 / 32.18
H
1.675 / 42.55
1.685 / 42.80
I
.002 / 0.05
.006 / 0.15
J
.095 / 2.41
.105 / 2.67
K
.115 / 2.92
.135 / 3.43
L
.250 / 6.35
M
.445 / 11.30
.457 / 11.61
1 = Collector 2 = Base 3 = Emitter
MINIMUM TYPICAL MAXIMUM
65
3.5
10
UNITS
V
V
---
1000
W
250
W
6.0
dB
43
%
70
ns
9:1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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