AVD090P Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVD090P
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVD090P is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
6.5 A PEAK
V_CB
55 V
P_DISS
T_J
T_STG
θ_JC
250 W PEAK
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.6 ^OC/W
PACKAGE STYLE .280 4L PILL (A)
A
.100x45°
C
B
ØG
D
F
E
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
.195 / 4.95
C
1.000 / 25.40
D
.004 / 0.10
E
.050 / 1.27
F
G
.275 / 6.99
MAXIMUM
inches / mm
.105 / 2.67
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
.285 / 7.21
ORDER CODE: ASI10563
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1 mA
I_CES
V_CB = 50 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
65
65
3.5
6.25
10
100
UNITS
V
V
V
mA
---
P_G
V_CC = 50 V P_OUT = 90 W f = 1025 - 1150 MHz
8.5
dB
η_C
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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