AVD090F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVD090F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVD090F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
6.5 A PEAK
V_CB
55 V
P_DISS
T_J
T_STG
θ_JC
250 W PEAK
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.6 ^OC/W
PACKAGE STYLE .250 2L FLG (B)
A
ØD
.100 X 45°
.088 x 45°
CHAMFER
C
B
E
F
G
H
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
1.050 / 26.67
C
.245 / 6.22
D
.120 / 3.05
E
.552 / 14.02
F
.790 / 20.07
G
H
.003 / 0.08
I
.052 / 1.32
J
.120 / 3.05
K
JK
I
MAXIMUM
inches / mm
.105 / 2.67
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.007 / 0.18
.072 / 1.83
.130 / 3.30
.210 / 5.33
ORDER CODE: ASI10562
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1 mA
I_CES
V_CB = 50 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
65
3.5
6.25
15
120
UNITS
V
V
V
mA
---
P_G
V_CC = 50 V P_OUT = 90 W
f = 1025 - 1150 MHz ^8.5
dB
η_C
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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