AVD035P_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVD035P
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVD035P is a medium
power Class C transistor for pulsed L-
Band avionics, DME/TACAN
Applications.
FEATURES:
• Internal Input Matching Network
• P_G = 10 dB at 35 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.0 A PEAK
V_CB
55 V
P_DISS
100 W PEAK
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.0 °C/W
PACKAGE STYLE .280 4L PILL (A)
A
C .100x45°
C
B^B
D
B
ØG
E
F
E
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
.195 / 4.95
C
1.000 / 25.40
D
.004 / 0.10
E
.050 / 1.27
F
G
.275 / 6.99
MAXIMUM
inches / mm
.105 / 2.67
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
.285 / 7.21
ORDER CODE: ASI10559
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1 mA
I_CES
V_CE = 50 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
65
3.5
5.0
15
120
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 50 V
P_IN = 3.0 W
P_OUT = 35 W
f = 1025 - 1150 MHz
10.7
43
11.2
48
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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