AVD002P Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AVD002P
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVD002P is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
250 mA
V_CC
P_DISS
T_J
T_STG
θ_JC
37 V
10 W @ T_C ≤ 100 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
10 ^OC/W
PACKAGE STYLE .280 4L PILL (A)
A
.100x45°
C
B
ØG
D
F
E
DIM
A
B
C
D
E
F
G
MINIMUM
inches / mm
.095 / 2.41
.195 / 4.95
1.000 / 25.40
.004 / 0.10
.050 / 1.27
.275 / 6.99
MAXIMUM
inches / mm
.105 / 2.67
.205 / 5.21
.007 / 0.18
.065 / 1.65
.145 / 3.68
.285 / 7.21
ORDER CODE: ASI10553
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1 mA
BV_CER
I_C = 5 mA
R_BE = 10 Ω
BV_EBO
I_E = 1 mA
I_CES
V_CE = 35 V
h_FE
V_CE = 5.0 V
I_C = 100 A
P_G
η_C
V_CC = 35 V P_OUT = 2.0 W
MHz
f = 1025 – 1150
MINIMUM TYPICAL MAXIMUM
45
45
3.5
1.0
30
300
UNITS
V
V
V
mA
---
9.0
dB
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1