AT9019-10 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON ABRUPT JUNCTION TUNING VARACTOR

AT9019-10
SILICON ABRUPT JUNCTION TUNING VARACTOR
DESCRIPTION:
The AT9019-10 is an Epitaxial Silicon
Abrupt Junction Microwave Tuning
Varactor. This Device is Passivated
With Silicon Dioxide Which Results in
Very Low Leakage Current. The
Capacitance Voltage Relationship
Closley Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I_C
100 mA
V_CE
90 V
P_DISS
250 mW @ T_C = 25 °C
T_J
-65 °C to +150 °C
T_STG
-65 °C to +150 °C
PACKAGE STYLE 10
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_T
V_R = 4.0 V
f = 1.0 MHz
∆C_T
C = 0 V / C = 8.0 V
T
T
Q
V_R = 4.0 V
f = 1.0 MHz
f = 50 MHz
T_C
V_R = 4.0 V
MINIMUM
90
29.70
9.5
500
TYPICAL
33.00
MAXIMUM
36.30
300
UNITS
V
pF
RATIO
---
Ppm/^OC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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