AT6021M Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON ABRUPT JUNCTION TUNING VARACTOR

AT6021M
SILICON ABRUPT JUNCTION TUNING VARACTOR
DESCRIPTION:
The ASI AT6021M is an Epitaxial
Silicon Abrupt Junction Microwave
Tuning Varactor. This Device is
Passivated With Silicon Dioxide Which
Results in Very Low Leakage Current.
The Capacitance Voltage Relationship
Closely Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I_C
100 mA
V_CE
P_DISS
T_J
T_STG
θ_JC
70 V
250 mW @ T_C = 25 ^OC
-65 to +150 ^OC
-65 to +150 ^OC
500 ^OC/W
PACKAGE STYLE 15
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_T
V_R = 4.0 V
f = 1.0 MHz
∆C_T
C_T0/C_T60
f = 1.0 MHz
∆C_T
C_T8/C_T60
f = 1.0 MHz
Q
V_R = 4.0 V
f = 50 MHz
T_C
V_R = 4.0 V
NONE
MINIMUM
70
44.65
7.4
2.50
600
TYPICAL
47.0
MAXIMUM
49.35
2.60
300
UNITS
V
pF
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PPM/°C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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