AT6019M Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON ABRUPT JUNCTION TUNING VARACTOR

AT6019M
SILICON ABRUPT JUNCTION TUNING VARACTOR
DESCRIPTION:
The AT6019M is an Epitaxial Silicon
Abrupt Junction Microwave Tuning
Varactor. This Device is Passivated
With Silicon Dioxide Which Results in
Very Low Leakage Current. The
Capacitance Voltage Relationship
Closley Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I_C
100 mA
V_CE
P_DISS
T_J
T_STG
70 V
250 mW @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +150 ^OC
PACKAGE STYLE 15
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_T
V_R = 4.0 V
f = 1.0 MHz
∆C_T
C = 0 V / C = 60 V
T
T
∆C_T
C = 8.0 V / C = 60 V
T
T
Q
V_R = 4.0 V
f = 1.0 MHz
f = 1.0 MHz
f = 50 MHz
T_C
V_R = 4.0 V
MINIMUM
70
31.35
7.4
2.50
800
TYPICAL
33.0
MAXIMUM
34.65
2.60
300
UNITS
V
pF
RATIO
RATIO
Ppm/^OC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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