AT41470 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON BIPOLAR TRANSISTOR

AT41470
NPN SILICON BIPOLAR TRANSISTOR
DESCRIPTION:
The ASI AT41470 is a Common
Emitter Device Designed for low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
MAXIMUM RATINGS
I_C
60 mA
V_CEO
12 V
V_CBO
20 V
V_EBO
1.5 V
P_DISS
500 mW @ T_C = 25°C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
PACKAGE STYLE
1 = BASE
2 & 4 = EMITTER
3 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
I_CBO
V_CB = 8.0 V
I_EBO
V_EB = 1.0 V
h_FE
V_CE = 8.0 V
I_C = 10 mA
C_CB
V_CB = 8.0 V
f = 1.0 MHz
f_t
V_CE = 8.0 V
I_C = 25 mA
f = 1.0 GHz
S_21E ²
V_CE = 8.0 V
I_C = 25 mA
f = 2.0 GHz
f = 4.0 GHz
P_1dB
V_CE = 8.0 V
I_C = 25 mA
f = 2.0 GHz
f = 4.0 GHz
G_1dB
V_CE = 8.0 V
I_C = 25 mA
f = 2.0 GHz
f = 4.0 GHz
NF_O
V_CE = 8.0 V
I_C = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
MINIMUM TYPICAL MAXIMUM
200
1.0
30
150
300
0.2
8.0
12.0
6.5
19.0
18.5
15.0
10.5
1.3
1.6
1.9
3.0
UNITS
Na
µA
---
pF
GHz
dB
dBm
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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