ASIS50-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASI S50-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI S50-28 is Designed for
Class AB or C, Common Emitter
Linear HF Communications
Applications.
FEATURES INCLUDE:
• High Power Gain
• Emitter Ballasting
MAXIMUM RATINGS
I_C
9.0 A
V_CB
P_DISS
T_J
T _STG
θ _JC
65 V
117 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
1.7 ^OC/W
PACKAGE STYLE .500" 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 200 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
35
4.0
2.0
10
200
UNITS
V
V
V
mA
---
C_ob
V_CB = 30 V
f = 1.0 MHz
150
pF
P_out
50
60
W
P_G
V_CE = 28 V
P_in = 1.0 W
fo = 30 MHz
17
18
dB
η_C
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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