ASIS15-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASI S15-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI S15-28 is Designed for
Class AB or C, Common Emitter
Linear HF Communications
Applications.
FEATURES INCLUDE:
• High Power Gain
•
Emitter Ballasting
MAXIMUM RATINGS
I_C
3.0 A
V_CB
P_DISS
T_J
T _STG
θ _JC
65 V
30 W @ T_C = 25 ^OC
-55 ^OC to +200 ^OC
-55 ^OC to +200 ^OC
5.8 ^OC/W
PACKAGE STYLE .380" 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 200 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.0
10
UNITS
V
V
V
mA
---
C_ob
V_CB = 30 V
f = 1.0 MHz
35
pF
P_out
15
---
W
P_g
V_CE = 28 V
P_in = 500 mW
fo = 30 MHz
15
18
---
dB
η_c
---
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1