ASI2223-4_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASI2223-4
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2223-4 is Designed for
General Purpose Clacc C Applications
up to 2.3 GHz.
FEATURES:
• Internal Input/Output Matching Networks
• P_G = 8.0 dB at 4.0 W/2.3 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.75 A
V_CC
26 V
P_DISS
15.9 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
11.0 °C/W
PACKAGE STYLE .400 2NL FLG
2X B
A
.025 x 45°
4x .062 x 45°
ØD
C
E
F
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
G
H
I
J
K
L
M IN IM U M
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.193 / 4.90
.450 / 11.43
.125 / 3.18
P
MN
M A X IM U M
inches / mm
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10531
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 5.0 mA
BV_CER
I_C = 10 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
40
40
3.5
1.0
10
100
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 22 V
P_OUT = 4.0 W f = 2.2 – 2.3 GHz
8.0
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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