ASI2223-20_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASI2223-20
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2223-20 is a Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications
FEATURES:
• Internal Input/Output Matching Networks
• Emitter Balasting
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
3.0 A
V_CC
25 V
P_DISS
55 W @ T_C ≤ 50 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
2.7 °C/W
PACKAGE STYLE .310 2L FLG
4x .062 x 45°
2xB
ØE
D
A
.040 x 45°
C
F
G
I
M
H
J
K
L
R
NP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
D
.286 / 7.26
.306 / 7.77
E
.110 / 2.79
.130 / 3.30
F
.306 / 7.77
.318 / 8.08
G
.148 / 3.76
H
.400 / 10.16
I
.119 / 3.02
J
.552 / 14.02
.572 / 14.53
K
.790 / 20.07
.810 / 20.57
L
.300 / 7.62
.320 / 8.13
M
.003 / 0.08
.006 / 0.15
N
.052 / 1.32
.072 / 1.83
P
.118 / 3.00
.131 / 3.33
R
.230 / 5.84
ORDER CODE: ASI10533
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 12 mA
BV_CER
I_C = 25 mA
R_BE = 10 Ω
BV_EBO
I_E = 2.5 mA
I_CBO
V_CB = 22 V
h_FE
V_CE = 5.0 V
I_C = 2.0 A
MINIMUM TYPICAL MAXIMUM
45
45
3.5
2.5
30
300
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 22 V
P_OUT = 20 W
f = 2.2 – 2.3 GHz
7.0
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/1