ASI10686 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
21.6 A
V_CBO
65 V
V_CES
65 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.5 V
875 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.2 ^OC/W
PACKAGE STYLE .400 BAL FLG(A)
A
B
FULL R
4X.060 R
C
E
P
D
FG
H
I
K
J
N
LM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
MINIMUM
inches / mm
.210 / 5.33
.045 / 1.14
.125 / 3.18
.380 / 9.65
.770 / 19.56
.070 / 1.78
.215 / 5.46
.420 / 10.67
.645 / 16.38
.895 / 22.73
.002 / 0.05
.058 / 1.47
.115 / 2.92
.395 / 10.03
MAXIMUM
inches / mm
.230 / 5.84
.055 / 1.40
.135 / 3.43
.390 / 9.91
.830 / 21.08
.080 / 2.03
.235 / 5.97
.430 / 10.92
.655 / 16.64
.905 / 22.99
.006 / 0.15
.065 / 1.65
.130 / 3.30
.230 / 5.84
.405 / 10.29
ORDER CODE: ASI10686
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 30 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
28
3.5
7.5
10
100
UNITS
V
V
V
V
mA
---
P_G
η_C
V_CE = 40 V
P_OUT = 300 W
f = 425 MHz
9.5
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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