ASB8000 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON BEAM LEAD PIN DIODE

ASB8000
SILICON BEAM LEAD PIN DIODE
DESCRIPTION:
The ASB8000 is a Silicon Beam Lead
PIN Diode Designed for High Speed
Switching Applications Up to 18 GHz.
FEATURES INCLUDE:
• Low Capacitance - 0.025 pF Typical
• Low Series Resistance - 2.5 Ω Typical
• High Beam Pulls - 5 Grams Minimum
MAXIMUM RATINGS
I_F
100 mA
V_R
P_DISS
T_J
T_STG
θ_JA
60 V
250 mW @ T_A = 25 ^OC
-65 ^OC to +175 ^OC
-65 ^OC to +200 ^OC
600 ^OC/W
PACKAGE STYLE BL1
NONE
CHARACTERISTICS TC = 25^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
C_J
V_R = 10 V
f = 2 - 18 GHz
MINIMUM
60
R_S
I_F = 10 mA
f = 1.0 GHz
τ
I_F = 10 mA
I_R = 6.0 mA
t_rr
I_F = 10 mA
I_R = 6.0 mA
Lead Pull
5
TYPICAL
0.025
2.5
40
2.4
MAXIMUM
0.035
3.0
UNITS
V
pF
Ω
nS
nS
gm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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