ASAT35L Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

ASAT35L
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASAT35L is a Common Base
Transistor Designed for L-Band
Satcom Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching Networks
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ_JC
3.5 A
50 V
55 W @ T_C = 25 ^OC
-55 ^OC to+200 ^OC
-55 ^OC to+200 ^OC
2.6 ^OC/W
PACKAGE STYLE 400 2L FLG
1 = Collector
2 & 4 = Base 3 = Emitter
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CES
I_C = 20 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 28 V
h_FE
V_CE = 5 V
I_C = 2.0 A
MINIMUM TYPICAL MAXIMUM
50
50
3.5
5.0
20
300
P_G
η_C
8.0
V_CE = 28 V P_OUT = 35 W f = 1500 - 1600 MHz
45
9.0
50
Z_CL
Z_IN
V_CE = 28 V
P_OUT = 35 W
f = 1500 MHz
3.0 + j0.5
4.0 + j15.0
Z_CL
Z_IN
V_CE = 28 V
P_OUT = 35 W
f = 1600 MHz
1.8 + j1.0
5.5 + j16.2
UNITS
V
V
V
mA
---
dB
%
Ohms
Ohms
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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