ASAT30 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASAT30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ASAT30 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
10 A
V_CB
60 V
V_CE
P_DISS
T_J
T_STG
θ_JC
35 V
140 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
3.5 ^OC/W
PACKAGE STYLE .250 2L FLG(A)
.020 x 45°
A
Ø .130 NOM.
.050 x 45°
DC
L
B
M
E
F
G
H
J
K
I
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.055 / 1.40
.065 / 1.65
B
.124 / 3.15
C
.243 / 6.17
.253 / 6.43
D
.635 / 16.13
.665 / 16.89
E
.555 / 14.10
.565 / 14.35
F
.739 / 18.77
.749 / 19.02
G
.315 / 8.00
.325 / 8.26
H
.002 / 0.05
.006 / 0.15
I
.055 / 1.40
.065 / 1.65
J
.075 / 1.91
.095 / 2.41
K
.190 / 4.83
L
.245 / 6.22
.255 / 6.48
M
.092 / 2.34
ORDER CODE: ASI10521
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 10 Ma
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
P_GE
V_CC = 28 V
η_C
GHz
P_OUT = 30 W
f = 1.65
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10
100
UNITS
V
V
V
mA
---
9.0
dB
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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