ASAT20_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ASAT20
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ASAT20 is Designed for
Genral Purpose Class C Operation up
to 1.7 GHz.
FEATURES:
• Internal Input Matching Network
• P_G = 8.0 dB at 20 W/1.7 GHz
• Omnigold™ Metalization System /
Nitride Passivation
• Common Base Class C
MAXIMUM RATINGS
I_C
3.2 A
V_CBO
50 V
V_CEO
28 V
V_EBO
3.5 V
P_DISS
40 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
4.0 °C/W
PACKAGE STYLE .250 2L FLG(A)
.020 x 45°
A
Ø .130 NOM.
.050 x 45°
DC
L
B
M
E
F
G
H
J
K
I
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.055 / 1.40
.065 / 1.65
B
.124 / 3.15
C
.243 / 6.17
.253 / 6.43
D
.635 / 16.13
.665 / 16.89
E
.555 / 14.10
.565 / 14.35
F
.739 / 18.77
.749 / 19.02
G
.315 / 8.00
.325 / 8.26
H
.002 / 0.05
.006 / 0.15
I
.055 / 1.40
.065 / 1.65
J
.075 / 1.91
.095 / 2.41
K
.190 / 4.83
L
.245 / 6.22
.255 / 6.48
M
.092 / 2.34
ORDER CODE: ASI10519
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 5.0 mA
BV_CEO
I_C = 5.0 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 800 mA
MINIMUM TYPICAL MAXIMUM
45
12
3.0
10
100
UNITS
V
V
V
---
C_OB
V_CB = 28 V
f = 1.0 MHz
24
pF
P_G
V_CE = 28 V
P_OUT = 20 W
η_C
I_C = 3.2 A
f = 1.40 GHz
7.6
8.0
8.2
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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